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BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 03 -- 18 February 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857BS.
1.2 Features
I I I I I Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 5 V; IC = 2 mA Conditions open base Min 200 Typ Max 45 100 450 Unit V mA
Per transistor
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
1 2 3 1 2
sym020
Simplified outline
6 5 4
Graphic symbol
6 5 4
TR2 TR1
3
3. Ordering information
Table 3. Ordering information Package Name BC847BS SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number
4. Marking
Table 4. BC847BS
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code[1] 1F*
Type number
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
2 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Per device Ptot Tj Tamb Tstg
[1] [2]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation
Conditions open emitter open base open collector single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C
[1] [2]
Min -65 -65
Max 50 45 5 100 200 200 220 250 300 400 150 +150 +150
Unit V V V mA mA mA mW mW mW mW C C C
Per transistor
total power dissipation junction temperature ambient temperature storage temperature
Tamb 25 C
[1] [2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
500 Ptot (mW) 400
(2) (1)
006aab419
300
200
100
0 -75
-25
25
75
125 175 Tamb (C)
(1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT363 (SC-88)
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
3 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Rth(j-sp) Per device Rth(j-a) thermal resistance from junction to ambient in free air
[1] [2]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air
[1] [2]
Min -
Typ -
Max 568 500 230
Unit K/W K/W K/W
Per transistor
-
-
416 313
K/W K/W
[1] [2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
103 Zth(j-a) (K/W) 102 =1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0
006aab420
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
4 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
103 Zth(j-a) (K/W) 102 =1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 10 0.01 0
006aab421
1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per transistor ICBO collector-base cut-off VCB = 30 V; IE = 0 A current VCB = 30 V; IE = 0 A; Tj = 150 C emitter-base cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage VEB = 5 V; IC = 0 A VCE = 5 V; IC = 2 mA IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA
[1]
Conditions
Min 200 580 100
Typ 755 655 11 -
Max 15 5 100 450 100 300 700 1.5 -
Unit nA A nA
IEBO hFE VCEsat VBEsat VBE Cc Ce fT
[1]
mV mV mV mV pF pF MHz
base-emitter voltage IC = 2 mA; VCE = 5 V collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz emitter capacitance transition frequency
Pulse test: tp 300 s; 0.02.
IC = ic = 0 A; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
5 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
600 hFE 500
(1)
mgt727
0.20 IC (A) 0.15
006aab422
IB (mA) = 4.0 3.2 2.4 1.6
3.6 2.8 2.0 1.2
400
(2)
0.8 0.10 0.4
300
200
0.05
(3)
100
0 10-1
1
10
102 I C (mA)
103
0 0 1 2 3 4 VCE (V) 5
VCE = 5 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 4.
Per transistor: DC current gain as a function of collector current; typical values
mgt728
Fig 5.
Per transistor: Collector current as a function of collector-emitter voltage; typical values
006aab423
1200 VBE (mV) 1000
(1)
1.2 VBEsat (V) 1.0
(1)
800
(2)
0.8
(2)
600 0.6 400
(3) (3)
200
0.4
0 10-2
10-1
1
10
102 103 I C (mA)
0.2 10-1
1
10
102 IC (mA)
103
VCE = 5 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 150 C
Fig 6.
Per transistor: Base-emitter voltage as a function of collector current; typical values
Fig 7.
Per transistor: Base-emitter saturation voltage as a function of collector current; typical values
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
6 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
104 VCEsat (mV) 103
mgt729
109
006aab424
fT (Hz)
108
102
(1) (3) (2)
10 10-1
1
10
102 I C (mA)
103
107 10-1
1
10 IC (mA)
102
IC/IB = 20 (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -55 C
VCE = 5 V; f = 1 MHz; Tamb = 25 C
Fig 8.
Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values
Fig 9.
Per transistor: Transition frequency as a function of collector current; typical values
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
7 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
8. Package outline
2.2 1.8 6 5 4 0.45 0.15 1.1 0.8
2.2 1.35 2.0 1.15
pin 1 index
1 0.65 1.3 Dimensions in mm
2
3 0.3 0.2 0.25 0.10 06-03-16
Fig 10. Package outline SOT363 (SC-88)
9. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BC847BS Package Description SOT363 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3]
Packing quantity 3000 -115 -125 10000 -135 -165
For further information and the availability of packing methods, see Section 13. T1: normal taping T2: reverse taping
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
8 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
10. Soldering
2.65
solder lands 2.35 1.5 0.6 0.5 (4x) (4x) 0.4 (2x) solder resist solder paste 0.5 (4x) 0.6 (4x) 1.8 0.6 (2x) occupied area Dimensions in mm
sot363_fr
Fig 11. Reflow soldering footprint SOT363 (SC-88)
1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport direction during soldering
1.3 2.45 5.3
1.3
sot363_fw
Fig 12. Wave soldering footprint SOT363 (SC-88)
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
9 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
11. Revision history
Table 9. Revision history Release date 20090218 Data sheet status Product data sheet Change notice Supersedes BC847BS_2 Document ID BC847BS_3 Modifications:
* * * * * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 4 "Marking": updated Section 7 "Characteristics": enhanced Section 9 "Packing information": added Section 10 "Soldering": added Section 12 "Legal information": updated Product specification Product specification BC847BS_1 -
BC847BS_2 BC847BS_1
19990428 19970714
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
10 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BC847BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 18 February 2009
11 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 18 February 2009 Document identifier: BC847BS_3

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